Gain boundary scattering in silicon doped polycrystlline gallium nitride films prepared by rf scattering

By:

Material type: Text

TextPublication details: February 2009Description: 125 In: Indian Journal of Pure and Applied Physics

Tags from this library: No tags from this library for this title. Log in to add tags.

Average rating: 0.0 (0 votes)

Holdings
Item type	Current library	Call number	Vol info	Status	Date due	Barcode
Journal Articles	BCAS Library		47;2	Available		JA11112

There are no comments on this title.

to post a comment.